The Cambridge Microsystems Savannah 200 atomic layer deposition (ALD) system uses a two-step chemical process that alternates pulses of water vapor and trimethylaluminum (TMA) to build a layer of Al2O3 on a silicon substate. Because of the two-step nature of the process, the film is forced to grow by successive monolayers, each with a thickness…
Using a 6″ wafer, we start with 50 nm of RV SiN, then deposit 40 nm a-Si followed by 20 nm of SiO2. RTP of 1050 C, 100 C/s, 60s. JP patterned the wafer to make standard SEPCON chips. The pores were transferred to the SiN using RIE. The RIE etches faster at the perimeter…
In early May, the Barcikowski lab shipped us four samples of gold nanoparticles for us to run separations on. They took forever to get here, and had aggregated and precipitated by the time they arrived. About a week ago, the lab sent another batch of four samples (which differed slightly from the samples they sent…