I measured burst pressures on two non-unifrom wafers w391, w393. They have lots of pinholes (especially w391) but the pressure they withstand is pretty high. I expected it to be much lower after looking at the membranes in the microscope.
EO permeability: We often refer to the ‘efficiency’ of EO with pnc-Si as being very high, but this may not be the case. What is actually high, as in the case of the other modes of transport, is the ‘permeability’ in EO. Dimensionally, the quantity we’ve referred to (in various places) as the ‘efficiency, the…
Hi all, For the past one month I have been working on a height-based device for culturing bEnd3 (mouse brain endothelial cells) under flow. Ideally, this device is to constitute a blood brain barrier (BBB) mimetic. Device Full View (Front): The fluid flow is driven by hydrostatic pressure, created through the differences in the…
Introduction Sphingosine-1-phosphate: production and endothelial cell signaling Sphingosine-1-phosphate (S1P) is a bioactive sphingolipid produced through the phosphorylation of sphingosine, a component of the plasma membrane, by SphK1/2. Many cells produce and store S1P, the largest source of which is platelets, due to their high native SphK activity. Erythrocytes and leukocytes are also sources of S1P…
SepCon EQ reaches Equilibrium in 2 1/2 hours!w310 (no pinholes)1x PBS (no protein)2 hours @ 1000rpm (3.3psi) -> 103 uL passage (56 uL/(min-cm2-psi) )2 1/2 hours @ 1500 rpm (5 psi) -> 204 uL passage (>74 uL/(min-cm2-psi) ) In the second case, the sample visibly reached what looked like equilibrium. It was not quite exact,…
Last week I conducted a variety of experiments to try to make a nanofluidic transistor (a device described in detail in this previous journal club post). I did some light optimization of the E-beam deposition of Ag films over a 3nm Ti adhesion layer in the PVD lesker machine and found that 12nm of Ag gives…
Here is a summary of results for membranes (w510X) that have been annealed without their protective oxide. 800 C RTP @ 10 C/s in susceptor 850 C RTP @ 10 C/s in susceptor 900 C RTP @ 10 C/s in susceptor 950 C RTP @ 10 C/s in susceptor It seems that annealing between 800…