Young's modulus and residual stress of pnc-Si deposited with different substrate biases
Last week, I reported on the the morphology of pnc-Si deposited with different substrate biases. We hypothesized that the reason for this was due to the different initial film stress of the as-deposited a-Si. Unfortunately, the pressure-displacement method does not allow us to measure amorphous films since it requires the membrane to be nearly flat…