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Nanomembrane Research Group
  • NRG

    Ar sputt. 15 nm temperature series

    ByDave Fang May 10, 2010

    Recently, I have been exploring the temperature dependence of post-Si deposition Ar sputtered films (15 nm thick). Below is a comparison of the average pore size, porosity, and density of pores of Ar and non-Ar sputtered films annealed between 800 C and 1100 C. It appears that Ar sputtering increases the avg. diameter and porosity…

    Read More Ar sputt. 15 nm temperature seriesContinue

  • NRG

    H2O2 also passes 'non-porous' SC348

    ByBarrett Nehilla May 10, 2010

    In order to validate the salt diffusion test I just posted, I’ve been measuring H2O2 diffusion with SC348 and the Amplex Red Assay from Invitrogen.  I first showed that H2O2 (=34 Da) passed SC348 in this experiment.  Here, I just repeated with slightly different standard curves and positive (‘regular’ Sepcon, SC195 = 4% and 13.9nm)…

    Read More H2O2 also passes 'non-porous' SC348Continue

  • NRG

    Salt diffusion through 'non-porous' SC348

    ByBarrett Nehilla May 10, 2010

    About a month ago, I posted some preliminary data that showed NaCl diffusion through SC348.  This was motivated by my observation of vacuole formation on SC348.  Since my hypothesis is that cell culture substrate permeability is the key factor for vacuole formation, cells shouldn’t have formed vacuoles on SC348.  Unless it is actually porous.  This…

    Read More Salt diffusion through 'non-porous' SC348Continue

  • NRG

    Neurofilament H Immunofluorescence

    ByBarrett Nehilla May 10, 2010

    For my BBB project, I’ve wanted to get nice images of glial cells and endothelial cells on opposite sides of pnc-Si membranes to demonstrate 1) optical transparency 2) that both cell types are in focus (and thus right on top of each other).  I’ve gotten some images like that in phase contrast but I also…

    Read More Neurofilament H ImmunofluorescenceContinue

  • NRG

    Amino silane electroosmosis

    ByJessica Snyder May 4, 2010

    Membrane chips were amino-silanized with APTES in the YES system.  I performed the standard electroosmosis tests with these chips.  Here are the flow rates in comparison with non treated and oxidized membranes: Here are the calculated zeta potentials: As you can see, amino silane reduces the rate of electroosmosis and the zeta potential. We would expect…

    Read More Amino silane electroosmosisContinue

  • NRG

    Morphology with and without susceptor

    ByDave Fang May 3, 2010

    A simple experiment that has never been done is to make a direct comparison between annealing inside and outside the susceptor. Intuitively, we would expect the morphologies to be quite different since the heating mechanism is different for both cases. Inside the susceptor, the film is heated through blackbody radiation from the susceptor. Without the…

    Read More Morphology with and without susceptorContinue

  • NRG

    BSA adsorption study on NHS-PEG surfaces-II

    ByRashmi Sriram May 3, 2010

    I  carried out experiments to test the adsorption of 1 mg/ml of BSA on NHS-PEG surfaces.This time the APTES layer was deposited from solution phase on to the silicon surface in contrast to vapor phase (YES) deposition. Again adsorption of BSA on different layers was confirmed using spectroscopic ellipsometry. Protocol for surface modification: The chips were left…

    Read More BSA adsorption study on NHS-PEG surfaces-IIContinue

  • NRG

    Cells on squares and slits (2)

    ByBarrett Nehilla April 23, 2010

    I few weeks ago, I had a couple wafers made with different size squares and slits.  I posted my first results here and here.  In that experiment, I showed pretty dramatic 2D structures over both supported and free-standing membranes with rectangle shapes.  Also, I showed vacuole formation at (almost) the single cell level on square…

    Read More Cells on squares and slits (2)Continue

  • NRG

    Larger pores in 30 nm pnc-Si w/ post-Si dep. Ar sputter

    ByDave Fang April 22, 2010

    Today I deposited two 30 nm thick Si films and annealed one at 1000 C for 1 min and the other at 1000 C for 5 min. My running hypothesis is that performing an Ar sputter after the silicon deposition creates “broken” bonds that seed crystallization. Therefore, the crystallization should nucleate at the interface and…

    Read More Larger pores in 30 nm pnc-Si w/ post-Si dep. Ar sputterContinue

  • NRG

    Pore size dependence with anneal time (15 nm)

    ByDave Fang April 21, 2010

    In a continuing study on how a post-silicon deposition Ar sputter affects morphology, I annealed three 15-nm films for 10 s, 60 s, and 300 s. If you recall in my first report, I found that the Ar sputter increases the porosity slightly for a 1000 C RTP and dramatically for a 900 C RTP….

    Read More Pore size dependence with anneal time (15 nm)Continue

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    • Home
    • Publications
    • Membranes
      • Common Chip Formats
      • Common Membranes
      • Microslit Membranes
    • Devices
      • µSiM
        • Geometry
        • µSiM CAD Files
        • Assembly
          • Protocols.io (µSiM Assembly)
          • Instructions
          • Common Issues and Troubleshooting Tips
        • Cell Culture Protocols
          • Top Well: hCMEC/D3
          • Top Well: HUVEC
          • Bottom Channel Culturing
          • Immunocytochemistry Protocol
          • Impact of Chip Orientation on Fluorescence Imaging
          • Permeability: In Situ Method
          • Permeability: Sampling Method
          • Cell Culture Common Issues and Troubleshooting Tips
      • SepCon®
        • Sepcon Assembly
        • Sepcon Video Protocol: Assembly
        • SepCon Gasket Silhouette File
        • SepCon Video Protocol: Wetting the membrane
        • SepCon Video Protocol: Disassembly
      • µSiM-DX
        • µSIM Video Protocol: Capture of Nanoparticles
    • Impact
      • TraCe-bMPS
      • HCIC
      • LOMP
      • SiMPore