SEM x-section of 30-50-30 NSN showing increased thickness after RTP
This is a continuation of earlier work showing 30-100-30 NSN x-sections where the Si layer thickness increases from ~92 nm before RTP to ~130 nm after RTP. Below are SEMs showing a ~50 nm thick a-Si film becoming a ~62 nm thick pnc-Si. (1000 C, 50 C/s, 60 s in susceptor, RTP after EDP etch) I…