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Wafer 416-T
Wafer 416-T is a TEOS wafer annealed at 900 C. Pinhole density is relatively low. left: (1,0) @ 35kx; right (0,4) @ 35kx left: (1,0) @ 50kx; right (0,4) @ 50kx
Induced non-uniformity in Si over a single wafer
A while back, we discussed leaving the rotation stage off during the a-Si deposition to induce a thickness gradient over a single wafer. The purpose of this experiment was to explore the different morphologies vs. thickness at a given RTP treatment. We estimated that we could cover a 3x thickness range over a 8 cm…
HUVEC adhesion update
Couple of HUVEC adhesion trials were carried out and the results were found satisfactory as seen in the charts below.
Discoloration – SepCon format
I performed a discoloration experiment with w639 in EGM + 10% FBS. I put 2 blank chips in the Sepcons membrane side down. I then placed one Sepcon in a well with EGM alone. The other Sepcon was placed in a well with EGM but also with another chip (labelled as Sepcon with chip, chip…
Early results with monolith devices
I have had a chance to play with some of the chips from Lot 1278, specifically the design with the 2 micron slots. Results are a bit of a mixed bag. Wetting these chips continues to be a challenge. My first attempt to use the vacuum wetting protocol in ethanol resulted in a broken membrane,…
Development of microvasculature mimetic device
From last few months, I am working on the development of a co-culturing system that can work as an in vitro mimetic of the human vasculature. The idea is to make a device capable of co-culturing, real time imaging, equipped with fluidics for testing different assays as well as to grow cells under shear. TEER measurement…
