Air tests on wafers with deposited oxide and Burst pressures for w407-413

ByMaryna Kavalenka

I tested those membranes from w335 and w341 with approximately 40 nm of deposited oxide on both sides for air permeability and burst pressures. There was tiny amount of air flow (I checked for leak) from few of them which I didn’t expect with such thick oxide. The burst pressures are higher then without the oxide as expected (approx. twice).
I will try thinner oxide (15nm) on one side of the membrane and see how flow and porosity changes.

Also, the latest wafers 407, 410, 412, 413 all have low burst pressures which range 1- 3psi.

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2 Comments

  1. Great. This is consistent with what Lingyun showed by TEM. Can you use your predictive powers to tell us what the porosity is?

  2. My predictive powers:)) If look at the air flow the porosity is very low, say a 0.05% or less. I think there are probably few bigger pores left which are not completely clogged and they give air flow.
    We are depositing thinner oxide today, it’s very interesting what will come out.

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