50 nm thick pnc-Si on wafer # 760

I found another old wafer # 760 and asked Josh Miller to deposit a 25-50-25 OSO stack.  He did a standard RTP of 1050 C, 60 s, 100 C/s.  (and Josh Miller did the EDP etch, so this is really all his work)
I measured a porosity ~4.5 %, and avg. dia. ~40 nm.  For comparison, the porosity and  pore size is about the same as 40 nm pnc-Si (6.5%, ~40 nm).  I would be interested in seeing the effects of a longer soak time, of say 300 s.
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