Similar Posts
A New Round of Separations Still Shows an Increase in Filtrate Flux Above Normalization for Larger Active Area Sepcons
Using methods pretty much identical to those outlined in Tuesday’s post, I was able to get very similar data for a different BSA concentration. Whereas Tuesday’s curves were all done with 1mg/mL BSA, this was done with 0.5mg/mL BSA. The first time I collected sample from the 5 slot chip during the buffer separations, I let…
Membrane dimensions
Below is an optical image that shows the amount of area loss caused by the preferential EDP etch. Based on these numbers, our most recent membrane slits measure 115 um x 2014 um.
Monolith X-sections
As the title states, these are images from the monolithically fabricated devices used by Kyle and Vincent in Ottawa. These devices were fractured with tweezers, then tilted and metallized with 5 nm of Pt, mounted on carbon tape.
Photobleaching
The mechanism of organic dye photobleaching is not well understood, but there are a few methods out there for reducing the rate of photobleaching. Some literature suggests that photobleaching is due to excess oxygen in solution and the interaction between the dye and oxygen radicals. Actin research swears by the following “anti-bleaching buffer” to limit…
Burst Pressure, Permeance of NSN pnc-Si SEPCONS with large pores
Karl, Charles and I measured the burst pressure and permeance of some 30-50-30 and 30-100-30 NSN. Burst Pressure: The SEPCONs readily burst at pressures under 1 psi when the flow was directed from the backside of the chip through the membrane. The membranes were able to withstand higher pressures when the pressure was applied from…
pnc-Si removal from SiN-NP chips
JP and Josh Miller used the Xactic Si etcher to remove the pnc-Si from SiN-NP samples. I believe they ran cycles until the samples looked visibly like SiN only. Below are some SEM cross-sections showing before and after images of the samples. Sample 1028 with no RIE etch: Sample 1036 with 20 s RIE…