Implantable Kidney

Wafer 416-T is a TEOS wafer annealed at 900 C. Pinhole density is relatively low. left: (1,0) @ 35kx; right (0,4) @ 35kx left: (1,0) @ 50kx; right (0,4) @ 50kx

One of the other suggestions from Angela Glading at lab meeting a while ago was to quantify the vacuoles on different culture areas.  So, I selected images from 3 different experiments (all at day14 of growth) and counted the number of cells which expressed vacuoles on different areas.  I then used my mask code in…

Last week, we ran a series of wafers with three different Si thicknesses (15 nm, 30 nm, 50 nm).  We wanted to explore how morphology shifted with film thickness.  Below are three membranes that were annealed at 800 C with no susceptor and a ramp rate of 100 C/s. As expected, as film thickness increases…

We’ve completed two successful 4-hour small animal hemodialysis experiments. I’ve also analysed the serum from all previous experiments. This graph shows only the recently analysed serum and doesn’t include the previously analyzed data. I’ll give a more detailed analysis of these results when we finish the next two animals, mid April. I’m in the midst of  submitting…

A few weeks ago, I did some RTP annealing of NSN and OSO stacks. The purpose of this annealing experiment was hoping to capture the onset of pore formation and see whether there is any different behavior between NSN and OSO stacks. The annealing temperature was set to 700C. The ramp rate was 50C/s all…