Samples are from wafers #316 and 318. This is the first time for wafer scale deposition.
Processing conditions:
1) chamber base pressure @ 6×10-7 Torr (previously @ 5×10-6 Torr)
2) 15nm Ti + 15nm Au, no vacuum break
Estimated “cell resistance”: about 20-25 ohm, much lower than previous measurement.
Possible reasons why lower resistance is observed:
1) “Au on top of Ti” vs. “Ti only”
2) better processing pressure resulting in much better film quality
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Please design another experiment that will let you confirm why these samples have much lower resistance. The more continuous gold will certainly help…